Center wavelength: 3300±50nm T>80%
Half width:160±20nm
Cut-off band except passband: 1-11um Tave<0.5%
Substrate: Silicon
Diameter: 100.00mm±0.50mm
Thickness: 0.5mm ± 0.05mm
(Base 、diameter、 thickness can be customized)
HC/CH4
PROD Model | Cutoff Wavelength(um) | Transmittance | Base | Cutoff | Diameter(mm) | Thickness(mm) | Gas application | |
Range(nm) | Average Value(%) | Cutoff Depth(%) | ||||||
NBP3300-160nm | 1-11um | 3300±50nm | T>80% | Silicon、germanium sapphire and so on | Tave<0.5% | 100±0.5mm | 0.5±0.05mm | HC/CH4 |
Product spectrogram