Center wavelength: 3850±50nm
Half width:180±20nm
Transmittance:>80%
Cut-off band except passband: 1-11um Tave<0.5%
Substrate: Silicon
Diameter: 100.00mm±0.50mm
Thickness: 0.5mm ± 0.05mm
(Base 、diameter、 thickness can be customized)
HC/CH4
Datasheet
NBP3850-180
PROD | Cut-off wavelength | Transmittance | Basis | Cut-off depth | Diameter | Thick | Application | |
Range | Tave | Tave | ||||||
NBP3850-180 | 1-11um | 3850±50nm | T>80% | Silicon, germanium, sapphire | Tave<0.5% | 100±0.5mm | 0.5±0.05mm | HC/CH4 |